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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD313 DESCRIPTION *Excellent Safe Operating Area *DC Current Gain-hFE= 25(Min.)@IC = 4A *Collector-Emitter Saturation Voltage: VCE(sat)= 1.0 V(Max)@ IC = 5A *Complement to Type BD314 APPLICATIONS *Designed for high quality amplifiers operating up to 60 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak w w scs .i w 80 80 5 10 20 4 115 200 -65~200 VALUE UNIT V V .cn mi e V A A A W Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.52 UNIT /W isc Websitewww.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD313 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.8 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IB=0 B 1.0 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current Gain-Bandwidth Product w w scs .i w IC= 4A; VCE= 4V IC= 10A; VCE= 4V IC= 0.5A ; VCE= 10V;f=1.0MHz .cn mi e 1.0 mA 25 5 4 MHz isc Websitewww.iscsemi.cn 2 |
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